PostDoc Position on Ferroelectric: Join the Institute of Materials Science of Barcelona (ICMAB-CSIC) for a PostDoc position in the exciting field of epitaxial ferroelectric hafnium oxide. The project aims to meet the increasing demand for materials in the era of the Internet of Things, focusing on reliability, robustness, and energy efficiency. The candidate will contribute to the development of devices based on high-quality ferroelectric oxide materials, particularly doped hafnium oxide (HfO2), a CMOS-compatible material. The work involves extensive structural and electric characterization, with a focus on nanoscale dynamics using atomic force microscopy and optical lithography for device fabrication.
PostDoc Position on Epitaxial Ferroelectric Hafnium Oxide
Designation: Postdoctoral Researcher
Research Area: Epitaxial Ferroelectric Hafnium Oxide
Location: Institute of Materials Science of Barcelona (ICMAB-CSIC), Spain
Eligibility/Qualification:
- Completed PhD or near completion
- Expertise in ferroelectrics and/or thin films
- Good written and spoken English
Job Description:
- Develop devices based on high-quality ferroelectric oxide materials
- Conduct structural and electric characterization using advanced techniques
- Perform nanoscale electric characterization with atomic force microscopy
- Utilize optical lithography for clean room facility-based device fabrication
- Mentor and supervise PhD students
- Collaborate with Spanish and international research groups
How to Apply: Send CV and a letter of interest to ifina@icmab.es and fsanchez@icmab.es
Deadline: April 29, 2024
What We Offer:
- CSIC postdoctoral contract
- 1.5 years of contract with the possibility of extension
- Ambitious project on materials science at the frontier of knowledge
- Incorporation 2-3 months after selection
About ICMAB: The Institute of Materials Science of Barcelona (ICMAB-CSIC) is a multidisciplinary research center focused on cutting-edge research in functional advanced materials in the fields of ENERGY, ELECTRONICS, NANOMEDICINE, and application fields yet to imagine.
About the Project: The project explores the development of devices using doped hafnium oxide, a CMOS-compatible material, for more efficient memory devices. The work involves state-of-the-art crystalline quality growth of ferroelectric material (HfO2) and collaboration with diverse expertise and aims within the group and ongoing collaborations with other Spanish and international groups.
Join us in pushing the boundaries of materials science!
