Home PhD Fully Funded PhD Position in InP-Based Photonic Integrated Circuits at TU Eindhoven,...

Fully Funded PhD Position in InP-Based Photonic Integrated Circuits at TU Eindhoven, Netherlands

Postdoc in Netherlands

Eindhoven University of Technology (TU/e) is inviting applications for a fully funded 4-year PhD position in Advanced Epitaxial Growth for Indium Phosphide (InP)-Based Photonic Integrated Circuits (PICs). This cutting-edge doctoral research project will focus on the material foundation of optical chips, utilizing state-of-the-art Aixtron epitaxial reactors to investigate material growth, component performance, and the manufacturing science behind photonic circuit yields.

Fully Funded PhD Position in Advanced Epitaxial Growth for InP-Based Photonic Integrated Circuits at TU Eindhoven

Position Overview

Program TypePhD Position / Research Assistantship
DesignationPhD Candidate / Researcher
InstitutionEindhoven University of Technology (TU/e)
Research GroupPhotonic Integration Group
Research AreaPhotonic Integrated Circuits, Epitaxial Growth, Semiconductor Physics, Materials Science
LocationEindhoven, North Brabant, Netherlands
Duration4 Years (Full-time)
Remuneration€3,204 to €4,051 gross per month plus 8% holiday allowance and 8.3% year-end bonus
Application DeadlineOpen until filled (Screening on a rolling basis)

Designation

PhD Researcher in Advanced Epitaxial Growth for InP-Based Photonic Integrated Circuits.

Research Area

Integrated Photonics, Metal Organic Vapour Phase Epitaxy (MOVPE/MOCVD), Indium Phosphide (InP) semiconductor platforms, Materials Science, Applied Physics, and Semiconductor Yield Engineering.

Location

Eindhoven University of Technology (TU/e), Brainport Eindhoven, Netherlands.

Scholarship & Position Description

Photonic Integrated Circuits (PICs) play a pivotal role in tackling bandwidth and energy-efficiency bottlenecks across telecommunications, cloud data centers, mobility, and biomedical sensing. For InP platforms, active devices such as semiconductor optical amplifiers (SOAs) and lasers provide critical light-generation capabilities. The core objective of this project is mastering the foundational epitaxial growth that governs these components.

Key responsibilities and project dimensions include:

  • Exploring the frontiers of epitaxial growth for InP-based material systems (including InGaAsP and InAlGaAs) using an advanced, latest-generation Aixtron epi reactor.
  • Establishing direct correlations between growth parameters and the electro-optical performance, defect density, and long-term reliability of active photonic devices.
  • Developing analytical and predictive models connecting the physical and chemical principles of MOVPE to industrial-scale wafer manufacturing yield.
  • Collaborating closely with industrial foundry partners within the JePPIX Pilot Line ecosystem using real fab data to validate predictive models.
  • Dedication of up to 10–15% of annual working time toward academic and teaching support activities.

Employment Conditions & Benefits

  • Gross Salary: Ranges from €3,204 gross per month in the first year to €4,051 gross per month in the fourth year (Scale P under the Dutch Universities CLA).
  • Allowances & Bonuses: 8% annual holiday allowance and an 8.3% year-end bonus.
  • Leave Benefits: Generous leave starting from 29 days per year (extendable up to 41 days under flexible working arrangements).
  • Pension & Social Coverage: ABP pension scheme (70% employer-funded), comprehensive health/mental well-being access (OpenUp), and parental leave schemes.
  • Relocation & Expat Support: Specialized Staff Immigration Team support and access to the Dutch tax compensation scheme (30% Expat Scheme, where eligible).

Eligibility / Qualification Requirements

Candidates must meet the following criteria to be considered:

  • Education: A Master’s degree (MSc) in Materials Science, Applied Physics, Electrical Engineering, Nanotechnology, or a closely related discipline.
  • Theoretical Background: Thorough foundation in semiconductor physics, crystallography, and standard material characterization methods.
  • Process Knowledge: Practical or conceptual knowledge of epitaxial growth methods (such as MOVPE/MOCVD) and compound semiconductor materials.
  • Analytical Capabilities: Competence in statistical data analysis, mathematical modeling, and interpreting large process datasets to isolate defect causes and yield limits.
  • Language Skills: Excellent oral and written English communication skills (minimum C1 level).

How to Apply

Applications must be submitted exclusively through the university’s online recruitment portal. Submissions via post or email are not accepted. Ensure your submission includes the following documentation:

  • Cover Letter: Detailing your specific motivation, research interests, and alignment with the project requirements.
  • Curriculum Vitae (CV): Outlining educational background, project experience, publications (if any), and full contact details of three academic/professional references.

Last Date for Apply

Open until filled. Applications will be screened continually upon receipt, so prospective researchers are strongly encouraged to apply at their earliest convenience.

Application Link

Click Here to Apply Online via the TU/e Official Portal

 

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