PostDoc: Nitride Heterostructures: Join us in our mission to explore the potential induction of room-temperature ferromagnetism in Gallium Nitride (GaN) through high hole densities. This opportunity involves utilizing two-dimensional hole gases formed in Mn-delta-doped nitride heterostructures to address this scientifically intriguing and technologically significant question. This position offers the chance to impact the development of advanced devices and contribute to the progression of nitride-based platforms.
PostDoc (m/f/d) Creating Spin-Polarized Two-Dimensional Hole Gases in Nitride Heterostructures
- Designation: Postdoctoral Researcher
- Research Area: Condensed Matter Physics, Electrical Engineering, Materials Science, Spintronics, Device Physics
- Location: Paul-Drude-Institute, Berlin, Germany
- Eligibility/Qualification: PhD degree in condensed matter physics, electrical engineering, materials science, or a related field. Background in spintronics or device physics is preferred. Hands-on experience with nitride-MBE is advantageous.
- Job Description:
- Growth of nitride heterostructures by molecular beam epitaxy
- Sample characterization by x-ray diffractometry, atomic force microscopy, and magneto-transport and C-V measurements
- Fabrication of gated-Hall bars
- Band diagram simulation using 1D Poisson-Schrödinger solver
- Data analysis and planning of experiments
- Assisting in the preparation of proposals for external funding
- Presentation of results at conferences and in publications
- How to Apply: Please upload your application by September 30, 2024. Your documents should include:
- A dedicated cover letter
- CV
- Diploma(s) and transcript(s)
- Publication list
- Letter(s) of recommendation/contact information of references
- Last Date for Apply: September 30, 2024
