Postdoctoral Fellow – Power Devices: The Laplace Laboratory (UMR) invites applications for a postdoctoral position focused on the design of Gallium Nitride (GaN) power devices. This role is part of the “VERTIGO” project, aimed at developing advanced power components based on GaN semiconductors, enhancing the performance of power electronic systems.
Postdoctoral Fellow – Design of GaN Power Devices and Integrated Functions (M/F)
Designation:
Postdoctoral Researcher
| Details | Information |
|---|---|
| Research Area | Micro and Nanotechnologies |
| Location | Toulouse, France |
| Contract Type | Fixed-term contract (CDD) |
| Duration | 12 months |
| Expected Start Date | February 2, 2026 |
| Work Capacity | Full-time |
| Salary Range | €3,041 – €4,395 gross per month |
| Application Deadline | January 1, 2026, 23:59 (Paris time) |
Eligibility/Qualification:
- PhD in relevant field.
- Experience in the design and simulation of electronic devices is preferred.
- Fluency in French and English.
Job Description:
The successful candidate will:
- Design and simulate GaN power components with integrated functionalities.
- Conduct numerical analysis to evaluate electrical performance and fabrication parameters.
- Collaborate with project partners on design and evaluation.
- Participate in characterization campaigns for innovative GaN components.
How to Apply:
Interested candidates should ensure their application profiles are fully completed before submitting. Applications must be submitted via the designated portal before the deadline.
Last Date to Apply:
January 1, 2026, at 23:59 (Paris time)
