Post-doctorate in Alloys for Spintronics: This post-doctoral position focuses on the synthesis and characterization of Heusler alloys for spintronic applications as part of the research project titled “Novel spin-gapless semiconducting Heusler alloys for spintronics (SpinGapHA)”. The candidate will explore Spin Gapless Semi-Conductors (SGSC) and Half-Metallic Ferromagnets (HMFs) to power next-generation spintronic devices. The role involves microstructural characterizations, electronic transport property measurements, and participation in high-level research collaborations.
Post-doctorate in Synthesis of Heusler Alloys for Spintronics
Designation
Post-Doctoral Research Fellow
Research Area
Spintronics, Materials Science, Heusler Alloys, Solid-State Chemistry, and Physics
Location
Institut de Chimie et des Matériaux Paris-Est (ICMPE), Thiais, France
Eligibility/Qualification
- Nationality: All nationalities except French are eligible. Preference will be given to Indian candidates in the context of CEFIPRA.
- Education: A doctorate degree in Materials Science, Solid-State Chemistry, or Solid-State Physics must be defended before 31/12/2024.
- Experience:
- Characterizing microstructural and electronic transport properties of bulk inorganic materials, preferably intermetallics.
- Powder X-ray diffraction expertise (Rietveld refinements).
- Experience in measuring electrical resistivity (empirical model implementation desirable).
- Desirable but not mandatory: magnetic property measurements or DFT calculations.
- Language: Fluency in English (spoken and written) is mandatory. Knowledge of French is not required.
Job Description
The post-doctoral fellow will:
- Work on new compositions of Heusler alloys highlighted using machine learning and DFT calculations.
- Conduct microstructural characterizations using X-ray diffraction and scanning electron microscopy.
- Perform differential scanning calorimetry experiments to identify structural transitions.
- Participate in neutron diffraction and synchrotron X-ray diffraction experiments to study atomic defects.
- Measure electronic transport properties (resistivity, Seebeck coefficient, Hall effect, and magnetoresistance) as a function of temperature and magnetic field.
- Analyze the effects of composition and fabrication methods on SGSC or HMF properties.
- Write research publications and present findings at conferences.
- Collaborate with the project’s Indian research partner (Saha Institute, Kolkata).
How to Apply
Candidates must submit a single PDF file (maximum 10 pages) containing:
- A cover letter (max 2 pages) including:
- Reasons for applying
- Summary of past research
- Professional goals
- A copy of the PhD degree or proof of PhD program completion (max 1 page).
- A copy of academic results (max 3 pages).
- An international curriculum vitae including a list of publications (max 2 pages).
- Two letters of recommendation:
- One from an Indian institution
- One from the French host institution
- A recommendation letter from the French scientific principal investigator (mandatory).
Submission Email: msi@ifindia.in
Contact for Queries: Eric Alleno (eric.alleno@cnrs.fr)
Last Date for Apply
All applications must be submitted by TBA (To Be Announced).
Benefits
- Monthly allowance: €2400
- Travel allowance
- Carte de séjour fee
- Campus France management fee
- French social security scheme registration
Note: Selection is conducted by a dedicated committee comprising members from the Embassy of France in India and external experts. Candidates without a recommendation letter from the French institution will not be considered.
