Designation/Position- Research Associate in University of Delhi
University of Delhi invites applications for Research Associate in University of Delhi from eligible and interested candidates
About- The Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, invites applications from motivated and eligible candidates for 1 Research Associate (RA) and 2 Project Associate-I positions under a CARS-DRDO funded research project titled “Device Simulation for Advanced GaN HEMT Architectures for Ka Band Applications.”
Research/Job Area- Electronics/Physics (with specialization in Electronics)
- Semiconductor Devices
- Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs)
- Device Modelling and Simulation
- Semiconductor Materials
- Advanced Electronic Device Architectures
- Ka-Band Applications
- Semiconductor Device Fabrication and Characterisation
Location- Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi – 110078, India.
Eligibility/Qualification–
1. Research Associate (RA)
Candidates must fulfil either of the following qualifications:
- PhD or equivalent degree in Electronics/Physics (with specialization in Electronics), with at least three research papers on HEMT published in Science Citation Index (SCI) journals.
- OR M.E./M.Tech. with a valid NET and/or GATE score, along with 3 years of research experience in semiconductor materials, device fabrication, characterisation, modelling, and simulation, and at least one research paper published in an SCI journal.
Age Limit: 35 years.
2. Project Associate-I
- B.Tech./M.Sc. in Electronics/Physics with Electronics specialization.
- OR Four-year B.Sc. degree in Electronics/Physics.
Age Limit: 27 years.
Job/Position Description-
The project is funded by the Centre for Advanced Research in Semiconductor Technologies (CARS), Defence Research and Development Organisation (DRDO), Ministry of Defence, Government of India.
The selected candidates will receive a monthly fellowship of up to ₹58,000 plus 30% HRA, depending on the position and eligibility.
Designation
- Research Associate (RA): 1 Position
- Project Associate-I: 2 Positions
| Position | Monthly Fellowship |
|---|---|
| Research Associate | ₹58,000 + 30% HRA |
| Project Associate-I | ₹25,000 + 30% HRA |
Selected candidates will work on the DRDO-funded research project titled “Device Simulation for Advanced GaN HEMT Architectures for Ka Band Applications.”
The research project focuses on advanced GaN High Electron Mobility Transistor (HEMT) architectures and their device simulation for Ka-band applications.
Candidates with relevant academic backgrounds and research experience in semiconductor materials, device fabrication, characterisation, modelling, and simulation are encouraged to apply.
Project Duration
The project is initially funded up to 31 March 2027, with a possibility of extension for another six months.
The positions are temporary. Appointment may be terminated with one month’s notice if the candidate’s performance is found unsatisfactory.
How to Apply-
Interested candidates must submit the following documents:
- Updated Curriculum Vitae (CV).
- Self-attested scanned copies of educational certificates and mark sheets from Class XII onwards.
- Self-attested scanned copy of UGC-NET/CSIR-NET/GATE qualification certificate, wherever applicable.
- Self-attested documents supporting research experience, special achievements, and publications, if any.
All documents must be submitted in PDF format through email to the Principal Investigator.
Email: msaxena@ddu.du.ac.in
Email Subject: Application for Research Associate (1) and Project Assistant (2) position, CARS-DRDO Project.
Only shortlisted candidates will be informed by email and invited for an in-person interview. Candidates must bring original educational certificates, date of birth proof, and other relevant documents at the time of the interview.
Note: No TA/DA will be provided for attending the interview.
Last Date for Apply– 14 November 2026
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