Home PhD PhD student in SiC Power Electronics at KTH, Sweden

PhD student in SiC Power Electronics at KTH, Sweden

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Summary

KTH Royal Institute of Technology is seeking a highly motivated doctoral student to contribute to cutting-edge research on Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) and Insulated Gate Bipolar Transistor (IGBT) devices. This role focuses on next-generation power electronics applications crucial for improving energy efficiency in industries such as renewable energy, electric vehicles, and industrial automation.

PhD student in SiC Power Electronics at KTH, Sweden

Designation

Doctoral Student (PhD)

Position Overview

Key InformationDetails
InstitutionKTH Royal Institute of Technology (School of Electrical Engineering and Computer Science)
Contract TypeFull-time, Temporary position (100% FTE)
Number of Positions2
SalaryMonthly salary according to KTH’s doctoral student salary agreement
Reference NumberPA-2026-1630

Research Area

Information and Communication Technology (focusing on semiconductor process technology, fabrication, and characterization of SiC power semiconductor devices).

Location

Stockholm, Stockholms län, Sweden.

Eligibility/Qualification

To be admitted, applicants must meet the following basic eligibility requirements:

  • A passed second-cycle degree (e.g., Master’s degree), OR
  • Completed course requirements of at least 240 higher education credits (with at least 60 second-cycle credits), OR
  • Acquired substantially equivalent knowledge within or outside the country.

Additional Requirements & Skills:

  • Mandatory: English proficiency equivalent to English B/6.
  • Meritorious: Experience with power semiconductor devices and semiconductor process technology.
  • Personal Skills: Goal-oriented, persevering, independent, collaborative, professional, and capable of working with complex issues.

Job Description

The PhD candidate will engage in the fabrication and characterization of new SiC bipolar devices within KTH’s Electrum Laboratory. The research aims to enhance device performance for power electronics applications. The student will be supervised by Prof. Per-Erik Hellström and will join an internationally recognized SiC research group, participating in the EU project WBG Pilot line. The position is a fully funded employment contract for up to four years of full-time doctoral education, potentially including up to 20% departmental duties (e.g., teaching or administration).

How to Apply

Interested candidates must apply through KTH’s online recruitment system. The application must include:

  1. Copies of diplomas and grades from previous university studies and certificates fulfilling the language requirements (certified copies required, translated into English or Swedish if necessary).
  2. Curriculum Vitae (CV) detailing relevant professional experience and knowledge.
  3. Application Letter (Maximum 2 pages) describing your academic interests, motivation for pursuing research studies, and how they relate to your previous studies and future goals.
  4. Representative publications or technical reports (provide an abstract and a web link for longer documents).

Last Date for Apply

August 31, 2026 (midnight, CET/CEST)

Link

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