Designation/Position- Research Associate at IIT Delhi
IIT Delhi, India, invites applications for Research Associate at IIT Delhi from eligible and interested candidates
About- Applications are invited from Indian nationals for a Research Associate (RA) position under a DST (NGM)-funded research project at the Centre for Applied Research in Electronics (CARE), IIT Delhi. The appointment is purely contractual, with a competitive consolidated fellowship and an opportunity to work on cutting-edge quantum and semiconductor device technologies, including single-photon emitters, avalanche photodetectors, and nanowire quantum devices.
Designation: Research Associate (RA) – 01 Post
Research Area: Physics / Electronics & Communication Engineering (ECE) / Materials Science
- Semiconductor device fabrication
- Single-photon emitters and detectors
- Single Photon Avalanche Detectors (SPADs)
- GaAs- and InP-based epitaxial semiconductor devices
- High-frequency and nanowire quantum devices
- Photodetector characterization
Location: IIT Delhi
Eligibility/Qualification:
Essential Qualification
- PhD in Physics / Electronics & Communication Engineering (ECE) / Materials Science
Required Experience
- Prior hands-on experience in:
- Semiconductor device fabrication
- Photodetector characterization
Desirable Experience
- Fabrication of single-photon detectors
- SPAD characterization
Additional Notes
- 5% relaxation in marks may be granted to SC/ST candidates
- In case of selection of a retired/superannuated government employee, salary will be fixed as per prevailing IRD norms
- The post may be downgraded at the discretion of the Selection Committee if a suitable candidate is not found
Job Description:
| Item | Details |
|---|---|
| Position | Research Associate (01) |
| Project Title | Development of On-Demand Single Photon Emitters, Single Photon Avalanche Detectors, High-Frequency Devices and Nanowire Quantum Devices Utilizing GaAs and InP-Based Epitaxial Semiconductors (Sub-project under RP04951) |
| Funding Agency | Department of Science and Technology (DST – NGM) |
| Principal Investigator | Prof. Samaresh Das |
| Department/Centre | Centre for Applied Research in Electronics (CARE), IIT Delhi |
| Fellowship | ₹58,000 per month + HRA (@27%) |
| Project Duration | Up to 31 March 2031 |
| Application Deadline | 27 January 2026 (5:00 PM IST) |
- Design, fabricate, and characterize semiconductor and quantum devices based on GaAs and InP epitaxial systems
- Develop and evaluate single-photon emitters and avalanche photodetectors
- Perform device-level electrical and optical measurements
- Support project objectives related to quantum photonics and high-frequency electronics
- Prepare technical reports, research papers, and project documentation
- Collaborate with faculty and research staff under the guidance of the Principal Investigator
How to Apply:
Download Form No. IRD/REC-4 from the IIT Delhi IRD website:
http://ird.iitd.ac.in/rec
Fill the form completely, including:
Educational qualifications (with percentage/division)
Detailed work experience
Email the duly filled application form with the Advertisement Number mentioned in the subject line to:
Prof. Samaresh Das
📧 recprofsam@gmail.com
Shortlisting & Interview
- IIT Delhi reserves the right to fix higher criteria for shortlisting
- Shortlisted candidates will be displayed on:
http://ird.iitd.ac.in/shortlisted - Only shortlisted candidates will be contacted for an online interview
For eligibility-related queries, candidates may directly contact the PI at the above email ID.
Last Date for Apply: 27 January 2026
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